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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *Complement to type TIP2955 *90 W at 25C case temperature *15 A continuous collector current APPLICATIONS *Designed for general-purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP3055 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 90 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.39 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current with base forward biased Transition frequency CONDITIONS IC=30mA ;IB=0 IC=4A; IB=0.4A IC=10A ;IB=3.3A IC=4A ; VCE=4V VCE=30V; IB=0 VCE=70Vdc;RBE=100Ohm VCE=100Vdc,VBE(off)=1.5Vdc VEB=7V; IC=0 IC=4A ; VCE=4V IC=10A ; VCE=4V VCE=30Vdc,t=1.0s, Nonrepetitive IC=0.5A ; VCE=10V 20 5.0 3.0 2.5 MIN 60 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE ICEO ICER ICEV IEBO hFE-1 hFE-2 Is/b fT TIP3055 TYP. MAX UNIT V 1.1 3.0 1.5 0.7 1.0 5.0 5.0 70 V V V mA mA mA mA A MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP3055 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP3055 4 |
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